溶胶-凝胶法制备AZO薄膜及Al掺杂机理的研究

Preparation of AZO thin films with sol-gel method and study of Al-doping mechanism

采用溶胶-凝胶法和浸渍提拉法成功制备了Al掺杂ZnO薄膜(以下简称AZO薄膜)。用X射线衍射仪(XRD)、场发射扫描电镜(FE-SEM)、分光光度计、霍尔(Hall)测量仪,分别研究了不同Al的掺杂浓度对薄膜的结晶性能、微观形貌和光电性能的影响,探讨了Al的掺杂机理。结果表明,Al的掺杂存在最佳值,当Al掺杂摩尔浓度为5%时,AZO薄膜的结晶性能、微观形貌和光电性能最佳,其透光率在80%以上,电阻率为2.1×102Ω·cm,霍尔迁移率为0.23cm2/V·s,载流子浓度为7.81×1014cm-3。

Al doped ZnO thin films（AZO films）was prepared by sol-gel method.The influence of Al doped doping concentration on the crystallization properties,micro-morphology and optical properties of this kind of films were studied,using by X-ray diffractometer,field emission stereoscan,spectral photometer,Hall admeasuring apparatus.Doping mechanism of Al was also studied.The results indicated that the crystallization properties,micro-morphology and optical properties of Al doped ZnO films were best on the condition that the sol density was 0.5mol/L,while the luminousness was over 80%;electrical resistivity was 2.1×10^2Ω·cm;Hall mobility ratio was 0.23cm^2/V·s and current density was 7.81×10^14cm^-3.