CdS纳米晶薄膜的制备及光电性能研究

Preparation of nano-crystalline CdS thin films and properties of photoelectric response

利用化学浴沉积法,以N(CH2CH2OH)3为络合剂,Cd(CH3COO)2·2H2O和(NH2)2CS为前驱体溶液制备了CdS纳米晶薄膜,利用FESEM、XRD考察了前驱体浓度、络合剂浓度、前驱体溶液的pH值、反应温度等因素对CdS纳米晶薄膜的表面形貌、晶粒大小及晶体结构的影响,在最佳工艺条件下可以制得表面平整,结构致密的CdS纳米晶薄膜。UV-Vis光谱表明CdS在短波长区域有较强的吸收,符合作为窗口材料和过渡层的要求;光电性能测试表明CdS具有较好的光电响应,呈特征n型半导体特性。

Nano-crystalline CdS thin films were prepared by chemical bath deposition method with N（CH2CH2OH）3 as complexing agent and Cd（CH3COO）2·2H2O and（NH2） 2CS as precursors.The influence of the deposition condition,such as the concentrations of precursors,complexing agent,pH value and deposition temperature,on the characteristics of the CdS thin films,were examined by means of FESEM,XRD.The results indicate that the compact nano-crystalline CdS thin films with uniform CdS nanoparticles can be obtained under the optimal depositing condition.UV-Vis spectrum shows that CdS thin films with strong absorption in the short wavelength regions,which meet the requirements of solar cells window material and transition layer.The photoelectric spectrum of CdS thin films show a strong photoelectric response and hold the typical features of ntype semiconductor.