有机薄膜晶体管钛/金电极的刻蚀工艺研究

Investigation of the etching process of titanium/aurum electrodes of the organic thin film transistor

采用感应耦合等离子体(ICP)干法刻蚀和湿法刻蚀的方法,分别刻蚀有机薄膜晶体管(OTFT)的钛/金薄膜电极。改变刻蚀的工艺条件,研究了不同的刻蚀工艺对OTFT器件性能的影响,并对刻蚀结果进行了比较与分析。结果表明,ICP干法刻蚀不适合用来刻蚀OTFT器件的钛/金电极,而湿法刻蚀工艺可用于刻蚀关键尺寸为5μm及其以上的钛/金电极,其最佳工艺条件分别是n(HF):n(HNO3):n(H2O)=1:1:5和n(KI):n(I2):n(H2O)=4:1:40。

Titanium/aurum thin films which were used as the electrode of the organic thin film transistor（OTFT）were etched respectively by inductively coupled plasma（ICP）dry etching and wet etching.The effect of different etching process on the performance of OTFT was investigated by changing the etching process,and the results were compared and analysed.The results showed that ICP dry etching is not suitable for etching titanium/aurum electrodes,and n（HF）：n（HNO3）：n（H2O）=1：1：5 and n（KI）：n（I2）：n（H2O）=4：1：40 were the optimum etching processes for etching titanium and aurum electrode with the critical dimensions of 5 microns and more,respectively.