利用典型Si（100）微结构对原子力显微镜探针参数进行表征

Characterization of AFM Tip Parameters with Typical Si （100） Microstructures

利用各向异性化学湿法刻蚀工艺在Si（100）上加工了具有本征侧墙角（54．73°）的典型微机电系统（MEMS）梯形结构。用该微结构作为线宽测试结构，对其进行了原子力显微镜（AFM）和扫描电子显微镜（SEM）线宽和轮廓的比对测量。并对AFM探针和样品耦合效应进行了研究，提出了AFM探针参数动态表征的模型，基于几何模型对线宽和轮廓测量中探针针尖形状和针尖位置参数进行了表征，提出了用曲率半径、安装倾角、扫描倾角和针尖半顶角来对原子力显微镜探针针尖进行表征。该方法是对现有AFM探针表征模型的改进和完善。

Typical Microelectromechanical System （MEMS） trapezoidal microstructures with intrinsic sidewall angle （54. 73°） are fabricated by anisotropic chemical wet etching of silicon （100） technique. The typical MEMS structures are used as linewidth test specimens. A comparative study is presented between atomic force microscopy （AFM） and scanning electron microscope （SEM） in linewidth and profile measurement on the test microstructures. The interaction between AFM tip and specimens is analyzed when AFM tip moves one the specimens. A geometry - based dynamic model is presented to realize the accurate characterization of AFM tip shape and position status in linewidth and profile measurement. Four parameters （curvature radius, installation angle, scanning tilting angle and half- cone angle） are used to characterize AFM tip. This method improves the existing AFM tip characterization methods.