双外延基区4H-SiC BJTs的建模与仿真(英文)

Modeling and Simulation of Double Base Epilayer 4H-SiC BJTs

基于4H-SiC的材料特性,对具有双外延基区结构的4H-SiC双极晶体管进行研究.通过分析该结构在基区内部形成的自建电场以及基区渡越时间,利用正交试验的方法,基于各种器件二维模型,对该器件结构进行数值计算,并进行平均极差分析.计算结果表明,该器件的共发射结电流增益最高可达72,具有负温度系数,并且在一个很宽的集电极电流范围内该特性保持不变.

With characteristics of 4H-SiC, a double base epilayer 4H-SiC bipolar junction transistors （BJTs） is investigated. By analyzing build-in electric field in the base region and the base transit time, the device is numerically calculated in two-dimensional models according to orthogonal experiments. A mean range analysis is made to find optimized structure of 4H-SiC BJTs. It shows that common emitter current gain with negative temperature coefficient is about 72 and it remains high in a wide range of collector current.