摘要
最近几年,金属氧化物IGZO薄膜晶体管成为研究热点,具有高迁移率、稳定性好、制作工艺简单等优点,备受人们关注。文章综述了制作金属氧化物IGZO晶体管的结构及其优缺点,总结了影响金属氧化物IGZO薄膜晶体管性能的因素,并提出了制作高性能金属氧化物IGZO薄膜晶体管的方法。
Recently,amorphous indium gallium zinc oxide thin film transistors(a-InGaZnO TFT) have attracted considerable attention for their outstanding merits,such as high mobility,good stability and simple fabrication process.This article reviews the device structure,advantages and disadvantages of a-IGZO TFT.We also summarize the impact a-IGZO TFT performance factors.In addition,the new methods of developing high performance and stability a-IGZO TFTare proposed.
出处
《现代显示》
2010年第10期28-32,共5页
Advanced Display