摘要
采用电子束蒸发和磁控溅射法在Ni基超合金基片上制备NiCr-NiSi薄膜热电偶,薄膜热电偶依次由Ni基超合金基片、NiCrAlY过渡层、Al2O3热氧化层、氧化铝绝缘层、NiCr-NiSi薄膜热电偶层以及氧化铝保护层构成。对此薄膜热电偶样品的静态标定结果表明,所制备的金属基NiCr-NiSi薄膜热电偶在25～600℃内具有良好的线性度,Seebeck(塞贝克)系数达到37.5μV/K,略低于K型标准热电偶的塞贝克系数40.0μV/K。
NiCr-NiSi thin film thermocouples were fabricated by the methods of electron beam evaporation and magnetron sputtering on the Ni-based superalloy substrates.The thermocuples were composed of Ni-based superalloy substrate,NiCrAlY buffer layer,thermal grown Al2O3 layer,sputtered Al2O3 insulated layer,NiCr-NiSi thin film thermocouple layer and sputtered Al2O3 protective layer,in turn.The results of the static calibration of the thin film thermocouple sample show that fabricated NiCr-NiSi thin film thermocouples on the Ni-based superalloy substrate possess good linearity from 25 ℃ to 600 ℃.The Seebeck coefficient of the sample is 37.5 μV/K,which is somewhat low than that of the K-type standard line thermocouples of 40.0 μV/K.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2010年第9期6-8,共3页
Electronic Components And Materials
基金
国防预研基金资助项目
