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金属基NiCr-NiSi薄膜热电偶的制备及性能研究 被引量:7

Fabrication and performances of NiCr-NiSi thin film thermocouples on metal substrates
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摘要 采用电子束蒸发和磁控溅射法在Ni基超合金基片上制备NiCr-NiSi薄膜热电偶,薄膜热电偶依次由Ni基超合金基片、NiCrAlY过渡层、Al2O3热氧化层、氧化铝绝缘层、NiCr-NiSi薄膜热电偶层以及氧化铝保护层构成。对此薄膜热电偶样品的静态标定结果表明,所制备的金属基NiCr-NiSi薄膜热电偶在25~600℃内具有良好的线性度,Seebeck(塞贝克)系数达到37.5μV/K,略低于K型标准热电偶的塞贝克系数40.0μV/K。 NiCr-NiSi thin film thermocouples were fabricated by the methods of electron beam evaporation and magnetron sputtering on the Ni-based superalloy substrates.The thermocuples were composed of Ni-based superalloy substrate,NiCrAlY buffer layer,thermal grown Al2O3 layer,sputtered Al2O3 insulated layer,NiCr-NiSi thin film thermocouple layer and sputtered Al2O3 protective layer,in turn.The results of the static calibration of the thin film thermocouple sample show that fabricated NiCr-NiSi thin film thermocouples on the Ni-based superalloy substrate possess good linearity from 25 ℃ to 600 ℃.The Seebeck coefficient of the sample is 37.5 μV/K,which is somewhat low than that of the K-type standard line thermocouples of 40.0 μV/K.
出处 《电子元件与材料》 CAS CSCD 北大核心 2010年第9期6-8,共3页 Electronic Components And Materials
基金 国防预研基金资助项目
关键词 NiCr-NiSi薄膜热电偶 静态标定 塞贝克系数 NiCr-NiSi thin film thermocouple static calibration Seebeck coefficient
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参考文献12

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二级参考文献24

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