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前驱体溶剂对铅基反铁电厚膜介电性能的影响 被引量:4

Effects of precursor solvent on the dielectric properties of lead-based antiferroelectric thick films
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摘要 采用sol-gel工艺制备了Pb0.97La0.02(Zr0.95Ti0.05)O3反铁电厚膜材料,研究了不同前驱体溶剂(乙酸和乙二醇乙醚)对反铁电厚膜介电性能的影响。结果表明:由乙二醇乙醚作为前驱体溶剂制备的反铁电厚膜材料,在室温下反铁电态稳定,其AFE-FE相的相变电场强度为184.05×103V/cm,FE-AFE相的相变电场强度为68.24×103V/cm,饱和极化强度为88.8×10-6C/cm2。 Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films were fabricated via the sol-gel process.The effects of precursor solvent(acetic acid and 2-ethoxyethanol) on the dielectric properties of the Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films were studied.The results show that the Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films obtained by employing 2-ethoxyethanol as the precursor solvent show a stable antiferroelectric state at room temperature,while their saturated polarization is 88.8×10-6 C/cm2 and the fields for their AFE-FE and FE-AFE phase transition are 184.05×103 V/cm and 68.24×103 V/cm,respectively.
出处 《电子元件与材料》 CAS CSCD 北大核心 2010年第9期9-12,共4页 Electronic Components And Materials
基金 国家自然科学基金资助项目(No.60806039) 山西省基础研究计划青年科技研究基金资助项目(No.2010021023-6)
关键词 sol-gel工艺 前驱体溶剂 反铁电厚膜 介电性能 sol-gel process precursor solvent antiferroelectric thick film dielectric property
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参考文献13

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