摘要
采用PECVD技术,以SiH4为反应源,在不同基片温度和射频功率下制备硅薄膜。对硅薄膜进行了XRD、IR、Raman分析。研究沉积参量对膜晶化过程的影响,对沉积机理作了初步讨论。
Using SiH4 as precursor, Si:H films are prepared by the the plasma enhanced chemical vapor deposition in deferent substrate temperature and radio power. The structure and composition were analyzed with XRD, Raman, and IR. The dependence of crystalization process to deposition factor was studied. Initial approach to deposition mechanism was also made.
出处
《贵州师范大学学报(自然科学版)》
CAS
1999年第2期16-18,共3页
Journal of Guizhou Normal University:Natural Sciences