硅氢薄膜的制备和结构

PREPARATION AND STRUCTURE OF Si:H FILMS

采用ＰＥＣＶＤ技术，以ＳｉＨ４为反应源，在不同基片温度和射频功率下制备硅薄膜。对硅薄膜进行了ＸＲＤ、ＩＲ、Ｒａｍａｎ分析。研究沉积参量对膜晶化过程的影响，对沉积机理作了初步讨论。

Using SiH4 as precursor, Si:H films are prepared by the the plasma enhanced chemical vapor deposition in deferent substrate temperature and radio power. The structure and composition were analyzed with XRD, Raman, and IR. The dependence of crystalization process to deposition factor was studied. Initial approach to deposition mechanism was also made.