二维GaAs基光子晶体微腔的制作与光谱特性分析

Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities

研究了以InAs量子点为有源区的二维GaAs基光子晶体微腔的设计与制作,测试并分析了室温下微腔的光谱特性.观察到了波长约为1137nm,谱线半高宽度约为1nm的尖锐低阶谐振模式发光峰.我们比较了不同刻蚀条件下光子晶体微腔的发光谱线,结果表明空气孔洞截面的垂直度是影响光子晶体微腔发光特性的重要因素之一.通过调节干法刻蚀工艺,改变空气孔半径与晶格常数的比率,可以在较大范围内调节谐振模式发光峰位置,达到谐振模式与量子点发光峰调谐的目的。

This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity with InAs quantum dots（QDs） emitters and analyzes the optical characteristics of cavity modes at room temperature.The micro-luminescence spectrum recorded from the nanocavities exhibits a narrow optical transition at the lowest order resonance wavelength of about 1137 nm with about 1 nm emission linewidth.In addition,the spectra of photonic crystal nanocavities processed under different etching conditions show that the verticality of air hole sidewall is an important factor determing the luminescence characteristics of photonic crystal nanocaivties.Finally,the variance of resonant modes is also discussed as a function of r /a ratio and will be used in techniques aimed at improving the probability of achieving spectral coupling of a single QD to a cavity mode.