摘要
The scaling behaviour of surface roughness evolution of microcrystalline silicon (/zc-Si:H) films prepared by very- high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) has been investigated by using a spectroscopic eHipsometry (SE) technique. The growth exponent β was analysed for the films deposited under different pressures Pg. The results suggest that films deposited at Pg = 70 Pa have a growth exponent β about 0.22, which corresponds to the definite diffusion growth. However, abnormal scaling behaviour occurs in the films deposited at Pg = 300 Pa. The exponent β is about 0.81 that is much larger than 0.5 of zero diffusion limit in the scaling theory. The growth mode ofμc-Si:H deposited at Pg = 300 Pa is clearly different from that of μc-Si:H at Pg = 70 Pa. Monte Carlo simulations indicate that the sticking process and the surface diffusion of the radicals are two key factors to affect the growth mode under different pressures. Under Pg = 300 Pa, β〉 0.5 is correlated with the strong shadowing effect resulting from the larger sticking coefficient.
The scaling behaviour of surface roughness evolution of microcrystalline silicon (/zc-Si:H) films prepared by very- high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) has been investigated by using a spectroscopic eHipsometry (SE) technique. The growth exponent β was analysed for the films deposited under different pressures Pg. The results suggest that films deposited at Pg = 70 Pa have a growth exponent β about 0.22, which corresponds to the definite diffusion growth. However, abnormal scaling behaviour occurs in the films deposited at Pg = 300 Pa. The exponent β is about 0.81 that is much larger than 0.5 of zero diffusion limit in the scaling theory. The growth mode ofμc-Si:H deposited at Pg = 300 Pa is clearly different from that of μc-Si:H at Pg = 70 Pa. Monte Carlo simulations indicate that the sticking process and the surface diffusion of the radicals are two key factors to affect the growth mode under different pressures. Under Pg = 300 Pa, β〉 0.5 is correlated with the strong shadowing effect resulting from the larger sticking coefficient.
基金
Project supported by the National Key Basic Research Program of China (Grant No. 2006CB202601)
the Natural Science Foundation of Henan Province of China (Grant No. 82300443203)