摘要
The A1N nanostructures with a wide band-gap of 6.28 eV are considered as ideal cold cathode materials because of their low electron-affinity. Many methods have been devoted to fabricating A1N nanostructures, but high growth temperature over 800℃ and the use of the catalysts in most methods limit their practical application and result in their poor field-emission behaviours in uniformity. This paper reports that without any catalysts, a simple chemical vapour deposition method is used to synthesize aligned A1N nanocone arrays at 550℃ on silicon substrate or indium tin oxide glass. Field emission measurements show that these nanocones prepared at low temperature have an average turn-on field of 6 V/μm and a threshold field of 11.7 V/μm as well as stable emission behaviours at high field, which suggests that they have promising applications in field emission area.
The A1N nanostructures with a wide band-gap of 6.28 eV are considered as ideal cold cathode materials because of their low electron-affinity. Many methods have been devoted to fabricating A1N nanostructures, but high growth temperature over 800℃ and the use of the catalysts in most methods limit their practical application and result in their poor field-emission behaviours in uniformity. This paper reports that without any catalysts, a simple chemical vapour deposition method is used to synthesize aligned A1N nanocone arrays at 550℃ on silicon substrate or indium tin oxide glass. Field emission measurements show that these nanocones prepared at low temperature have an average turn-on field of 6 V/μm and a threshold field of 11.7 V/μm as well as stable emission behaviours at high field, which suggests that they have promising applications in field emission area.
基金
Project supported by the National Basic Research Program of China (973 Program, Grant No. 2007CB935500)
863 Program (Grant No. 2007AA03Z305)
Science Foundation for Young Scholars (Grant No. 50802117)
the National Joint Science Fund with Guangdong Province (Grant Nos. U0634002 and U0734003)
the Doctoral Foundation of Educational Ministry of China (Grant Nos. 20070558063 and 09lgpy28)
the Science and Technology Foundation of the Educational Department of Guangdong Province
the Science and Technology Department of Guangzhou City
