反应磁控溅射法制备二氧化硅薄膜的研究

Reactive Magnetron Sputtering Method for Deposition of Silicon Oxide Thin Films

采用反应磁控溅射的方法沉积二氧化硅薄膜,研究了二氧化硅薄膜的光学特性,并与用反应离子束溅射方法沉积二氧化硅薄膜进行了对比。实验结果表明:用反应磁控溅射法沉积二氧化硅薄膜,薄膜的折射率、沉积速率主要受反应气体(氧气)浓度的影响,氧气含量超过15%(体积分数)后,溅射过程进入反应模式,沉积速率随氧气浓度增加而降低;入射光波长为630 nm时,薄膜折射率为1.50。对比2种薄膜沉积方法后确定,在二氧化硅薄膜工业生产中,反应磁控溅射方法更为可取。

Optical characteristic of silicon oxide thin films deposited by the reactive magnetron method have been compared to those deposited by the reactive ion-beam sputtering method.Dependences of refractive index and deposition rate on oxygen concentration in Ar/O2 working gas mixture were determined.By the reactive magnetron method at O2 content in working gas mixture more than 15% were deposited silicon oxide films with refractive index 1.50 on the wavelength 630 nm.In case of the the reactive magnetron the SiO2 film deposition rate decreases when the process is switched to the reactive mode.Comparison of two kinds of thin film deposition method was determined,choose the reactive magnetron method for industrial formation of the oxide silicon thin films.