一维纳米SiC-CNTs复合结构的生长机制和阴极射线发光

Growth Mechanism and Cathodoluminescence of One-dimensional Composite Nanostructure

采用直接固相反应法制备了一维SiC-CNTs纳米复合结构。初始反应原料为纯的硅粉和碳纳米管混合物,没有使用任何触媒,在1 400℃温度下获得了一维纳米产物。采用X射线衍射、扫描电子显微镜、拉曼光谱、阴极射线发光光谱研究了产物的结构和光学性质。获得的一维S iC-CNTs纳米复合结构外径约为60nm,长度超过几个微米。CL谱中存在三个发射带,中心位置分别为2.89,2.39,2.22 eV。

One-dimensional silicon carbide-carbon nanotube composite nanostructure was fabricated using a direct solid reaction process between pure silicon powders and carbon nanotubes at 1 400 ℃ in this paper.A structural and optical analysis,by mean of X-ray diffraction,scanning electron microscopy,Raman scattering and cathodoluminescence spectroscopy were performed.The outer diameter of the as-prepared one-dimensional composite nanostructure was approximately 60 nm.The composite products showed pronounced luminescent properties with three emission bands centered at 2.89,2.39 and 2.22 eV by room temperature cathodoluminescence.