摘要
The thermal and electro stability of multi-finger heterojunction bipolar transistors （HBTs） with different structures were analyzed and discussed simultaneously. The thermal stability of the devices with different layout structures was assessed by the DC-I V test and thermal resistance calculation. Their electro stability; was assessed by the calculation of the stability factor K based on the S parameter of the HBT. It is found that HBTs with higher thermal stability are prone to lower electro stability. The trade-off relationship between the two types of stability was explained and discussed by using a compact K-factor analytic formula which is derived from the small signal equivalent circuit model of HBT. The electro stability of the device with a thermal ballasting resistor was also discussed, based on the analytic formula.
The thermal and electro stability of multi-finger heterojunction bipolar transistors （HBTs） with different structures were analyzed and discussed simultaneously. The thermal stability of the devices with different layout structures was assessed by the DC-I V test and thermal resistance calculation. Their electro stability; was assessed by the calculation of the stability factor K based on the S parameter of the HBT. It is found that HBTs with higher thermal stability are prone to lower electro stability. The trade-off relationship between the two types of stability was explained and discussed by using a compact K-factor analytic formula which is derived from the small signal equivalent circuit model of HBT. The electro stability of the device with a thermal ballasting resistor was also discussed, based on the analytic formula.
