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Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy

Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy
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摘要 In order to analyze the thermal characteristics of the cavity facet of a semiconductor laser, a home-built near-field scanning optical microscopy （NSOM） is employed to probe the topography of the facet. By comparing the topographic images of two samples under different DC current injections, we can find that the thermal characteristic is related to its lifetime. We show that it is possible to predict the lifetime of the semiconductor laser diode with nondestructive tests. In order to analyze the thermal characteristics of the cavity facet of a semiconductor laser, a home-built near-field scanning optical microscopy （NSOM） is employed to probe the topography of the facet. By comparing the topographic images of two samples under different DC current injections, we can find that the thermal characteristic is related to its lifetime. We show that it is possible to predict the lifetime of the semiconductor laser diode with nondestructive tests.
作者 饶岚 宋国峰 陈良惠
机构地区 Institute of Semiconductors School of Electronic Engineering
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第10期47-51,共5页 半导体学报（英文版）
关键词 semiconductor laser NSOM thermal expansion semiconductor laser NSOM thermal expansion
分类号 TN248.4 [电子电信—物理电子学] TH742 [机械工程—光学工程]
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参考文献18

  • 1Walker C L, Bryce A C, Marsh J H. Improved catastrophic optical damage level from laser with nonabsorbing mirrors. IEEE Photonics Technol Lett, 2002, 14(10): 1394.
  • 2Li Y. Lifetime prediction of diode lasers with different aging behaviors. SPIE, 2007, 6485:648519.
  • 3Kirkup L, Kalceff W, McCredie G. Effect of injection current on the repeatability of laser diode junction voltage-temperature measurements. J Appl Phys, 2007, 101:023118.
  • 4Tien T Q, Weik F, Tomm J W, et al. Thermal properties and degradation behavior of red-emitting high-power diode lasers. Appl Phys Lett, 2006, 89:181112.
  • 5Sanayeh M B, Brick P, Schmid W, et al. Temperature-power dependence of catastrophic optical damage in AlGaInP laser diodes. Appl Plays Lett, 2007, 91:041115.
  • 6Ziegler M, Talalaev V, Tomm J W, et al. Surface recombination and facet heating in high-power diode lasers. Appl Phys Lett, 2008, 92:203506.
  • 7Rossetti M, Smeeton T M, Tan W S, et al. Degradation of InGaN/GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings. Appl Phys Lett, 2008, 92: 151110.
  • 8Bull S, Andrianov A V, Harrison I, et al. A spectroscopically resolved photo- and electroluminescence microscopy technique for the study of high-power and high-brightness laser diodes. IEEE Trans Instrum Meas, 2005, 54(3): 1079.
  • 9Rommel J M, Gavrilovic P, Dabkowski F P. Photoluminescence measurement of the facet temperature of 1 W gain-guided AlGaAs/GaAs laser diodes. J Appl Phys, 1996, 80(11): 6547.
  • 10Chavan A, Radionova R, Charache G W, et al. Comparison of facet temperature and degradation of unpumped and passivated facets orAl-free 940-nm lasers using photoluminescence. IEEE J Quantum Electron, 2005, 41(5): 630.
Journal of Semiconductors
2010年 第10期

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