摘要
A MEMS piezoresistive magnetic field sensor based on a silicon bridge structure has been simulated and tested. The sensor consists of a silicon sensitivity diaphragm embedded with a piezoresistive Wheatstone bridge, and a ferromagnetic magnet adhered to the sensitivity diaphragm. When the sensor is subjected to an external magnetic field, the magnetic force bends the silicon sensitivity diaphragm, producing stress and resistors change of the Wheatstone bridge and the output voltage of the sensor. Good agreement is observed between the theory and measurement behavior of the magnetic field sensor. Experimental results demonstrate that the maximum sensitivity and minimum resolution are 48 mV/T and 160 μT, respectively, making this device suitable for strong magnetic field measurement. Research results indicate that the sensor repeatability and dynamic response time are about 0.66% and 150 ms, respectively.
A MEMS piezoresistive magnetic field sensor based on a silicon bridge structure has been simulated and tested. The sensor consists of a silicon sensitivity diaphragm embedded with a piezoresistive Wheatstone bridge, and a ferromagnetic magnet adhered to the sensitivity diaphragm. When the sensor is subjected to an external magnetic field, the magnetic force bends the silicon sensitivity diaphragm, producing stress and resistors change of the Wheatstone bridge and the output voltage of the sensor. Good agreement is observed between the theory and measurement behavior of the magnetic field sensor. Experimental results demonstrate that the maximum sensitivity and minimum resolution are 48 mV/T and 160 μT, respectively, making this device suitable for strong magnetic field measurement. Research results indicate that the sensor repeatability and dynamic response time are about 0.66% and 150 ms, respectively.
基金
Project supported by the National Natural Science Foundation of China(No.60871024)
