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Dummy fill effect on CMP planarity

Dummy fill effect on CMP planarity
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摘要 With the use of a chemical-mechanical polishing （CMP） simulator verified by testing data from a foundry, the effect of dummy fill characteristics, such as fill size, fill density and fill shape, on CMP planarity is analyzed. The results indicate that dummy density has a significant impact on oxide erosion, and copper dishing is in proportion to dummy size. We also demonstrate that cross shape dummy fill can have the best dishing performance at the same density. With the use of a chemical-mechanical polishing （CMP） simulator verified by testing data from a foundry, the effect of dummy fill characteristics, such as fill size, fill density and fill shape, on CMP planarity is analyzed. The results indicate that dummy density has a significant impact on oxide erosion, and copper dishing is in proportion to dummy size. We also demonstrate that cross shape dummy fill can have the best dishing performance at the same density.
作者 周隽雄 陈岚 阮文彪 李志刚 沈伟翔 叶甜春
机构地区 Institute of Microelectronics
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第10期135-138,共4页 半导体学报（英文版）
基金 Project supported by the National Major Science and Technology Special Project of China(No.2008ZX01035-001-08)
关键词 chemical mechanical polishing dummy fill DISHING EROSION PLANARITY chemical mechanical polishing dummy fill dishing erosion planarity
分类号 TN305.2 [电子电信—物理电子学]
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Journal of Semiconductors
2010年 第10期

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