PTCBaTiO_3半导陶瓷介电迟豫特性

The Dielectric of PTC Semiconductor Cermics

实验发现，掺Ｍｎ的ＰＴＣ钛酸钡样品损耗因子在样品的温度高于其居里点后，首先随温度缓慢变化，然后在某一温度处开始增大；其原因是：外场频率ω＜ω１（ε）时，ε１（ω）是ω的增函数，温度增加时，τ迅速下降，故Ｄ增加。由此可知，随着温度增加，Ｄ首先缓慢变化，然后在某一温度处，迅速增加。

It is discovered that the dielectric loss fator of the PTC Titanium Barium sample doped Mn, above the Curie point, firstly, change slowly, afterwards, have undergone a fairly great rising in the high temperature region, which are caused by D increasing due to temperature increasing and τ decreasing.