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5～12GHz新型复合管宽带功率放大器设计 被引量：2

5～12 GHz Broadband Microwave Amplifier Using A Novel Composite Transistor
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摘要 利用一种新型HBT复合晶体管结构设计了一款宽带功率放大器,有效抑制了HBT的大信号Kink效应。采用微波仿真软件AWR对电路结构进行了优化和仿真,结果显示,在5～12GHz频带内,复合晶体管结构的输出阻抗值更稳定,带宽得到有效扩展,最高增益达到11dB,带内波动<0.5dB,在9GHz工作频率时,其1dB压缩点处的输出功率为26dBm。 A novel broadband power amplifier is designed using a composite transistor consisting of an inverted transistor parallel-connected to a standard RF power transistor to alleviate the Kink phenomenon of GaAs HBT.Simulation and optimization results based on AWR soft show that the novel composite transistor can get a stable output impedance Zout within 5～12 GHz frequency range with a wideband amplifier＇s peak gain of 11 dB and a ripple in band less than 0.5 dB,and its P1dB is 26 dBm at 9 GHz operation frequency.
作者 程华 严唯敏 滑育楠 胡善文 高怀
机构地区 东南大学苏州研究院高频高功率器件与集成技术研究中心 苏州大学应用技术学院 东南大学国家ASIC系统工程技术研究中心
出处 《电子科技》 2010年第10期18-21,共4页 Electronic Science and Technology
关键词 宽带匹配 KINK效应 GAAS HBT 复合晶体管 matching Kink phenomenon GaAs HBT composite transistor
分类号 TN325 [电子电信—物理电子学]
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参考文献8

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同被引文献16

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  • 10张方迪,张民,叶培大.一种GaN宽禁带功率放大器的设计[J].现代电子技术,2010,33(13):45-47. 被引量：7

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电子科技
2010年 第10期

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