静电放电对高频小功率硅晶体管的双重作用

Double Effects of ESD on High-frequency Low-power Silicon Transistors

为了深入研究静电放电对双极晶体管的作用效应是否发生改变,对目前广泛使用的高频小功率硅双极晶体管的静电放电失效进行了实验分析.采用相应的静电放电模拟器,进行不同电压的静电放电注入实验再配合加速寿命实验,一方面验证了低于失效阈值的静电放电注入可能在该类晶体管内部造成潜在性失效,另一方面发现静电放电的注入也可能类似退火,对部分该类晶体管起到了训练加固的作用.

In order to research whether the ESD effects on bipolar transistors were changed or not,ESD failures were analyzed on high-frequency low-power silicon bipolar junction transistors which were still used widely.ESD injected tests with different voltages were carried on by the corresponding ESD simulator,and the life accelerated tests were made to test the lifetime of bipolar transistors.It was confirmed that ESD injection,which voltage was lower than the threshold,could cause latent damage in BJT.On the other side,it was found that ESD injection might train and enhance other BJTs liked anneal to prolong the life time of others transistors or enhance their antistatic ability.