摘要
利用光学显微镜和透射电子显微镜,研究了1100℃退火后快中子辐照直拉硅中氧沉淀及诱生缺陷的产生及其随退火时间的演变情况。实验发现:在快中子辐照直拉硅中,氧沉淀过程中产生了氧沉淀诱生的体层错和结构复杂的位错环。延长退火时间,缺陷密度增加。当过饱和态的间隙氧基本沉淀之后,诱生缺陷密度不再变化。较高剂量辐照样品中的缺陷尺寸较大,但密度相对较低。经高温退火的快中子辐照直拉硅中生成了直径约为40nm的氧沉淀,其形貌为多面体氧沉淀。
Oxygen precipitation and induced defects were investigated in fast neutron irradiated Czochralski silicon（CZ-Si） after annealing at 1 100 ℃ by optical microscopy and transmission electron microscope.The results indicate that the oxygen precipitates induced stacking fault,dislocation and dislocation loop were produced in fast neutron irradiated CZ-Si during the process of oxygen precipitation.With the increase of annealing time,the density of defects increases until all the supersaturated interstitial oxygen precipitates.The defects in the higher dose irradiated sample are larger than that in the lower doses irradiated one,but the density of defects is lower.The diameter of polyhedral oxygen precipitates in CZ-Si after the annealing is 40 nm.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2010年第10期1927-1930,共4页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金(50872028)
河北省自然科学基金(E20-08000079)
河北省教育厅科研计划(2009318)资助项目
关键词
快中子辐照
直拉硅
氧沉淀
缺陷
fast neutron irradiation
Czochralski silicon
oxygen precipitation
defects
