工艺参数对SOI NMOS总剂量效应的影响

Impact of process parameters on total ionizing dose effect on SOI NMOS

本文模拟了0.25μm SOI NMOS的总剂量效应,I-V特性曲线随总剂量变化趋势与实测曲线一致。在此基础上探讨了器件在不同掺杂浓度、硅膜厚度、埋氧层厚度以及栅氧层厚度等工艺条件下的总剂量效应,分析了一定剂量条件下各项工艺引起器件性能变化的原因。结果表明,源漏高掺杂、薄硅膜、适当厚度的埋氧层和较薄的栅氧层均有利于提高SOI NMOS的抗总剂量效应的能力。这为器件提高抗总剂量效应设计和加固提供了一定的理论依据。

Total ionizing dose effect on 0.25 μm SOI NMOS is simulated in this paper. The simulated I-V characteristics curves for different total doses are in good agreement with experimental data. Total ionizing dose effects for various process parameters,such as doping concentration,silicon film thickness,buried oxide layer thickness and gate oxide layer thickness,are investigated under 104 Gy（Si） total ionizing dose for SOI NMOS. The results show that SOI NMOS with heavily doped thin gate oxide layer,appropriate thickness of buried oxide layer and thin silicon film is the best tolerant. The reasons are discussed. These are of help in device hardening design against total ionizing dose effects.