浮栅ROM器件的脉冲与稳态总剂量效应研究

Total dose effect on floating gate ROMs irradiated by Co-60 γ-rays or pulsed γ-rays

目前国内存储器辐照效应研究多数集中于功能测试,对具体参数研究较少。本文提出了浮栅型存储器阈值电压的测试方法,并引入紫外预辐照方法,对几种不同集成度的浮栅型存储器EPROM,开展了脉冲与稳态总剂量效应对器件阈值电压影响的异同性研究,分析了损伤机理。研究结果表明,不同于MOS和CMOS器件,脉冲辐照引起的浮栅ROM器件阈值电压漂移大于稳态辐照,为系统器件选型提供了重要参考。

Memory radiation effect studies in China have been mainly focused on functionality measurement. According to the present situation,threshold voltage testing method was presented on Floating Gate （FG） memory. FG EPROMs of different integration scales were pre-irradiation by UV lights,followed by irradiation of 60Co γ-rays,or pulsed γ-rays. The total dose effect similarities and differences were studied. The damage mechanism was analyzed. The results showed that unlike MOS and CMOS devices,FG memory threshold voltage shifted more due to pulsed irradiation than 60Co γ-ray irradiation. This is of important reference for choosing the device type for a certain system.