摘要
该文分析了激光修调对CrSi薄膜电阻稳定性的影响,获得了对CrSi薄膜电阻进行激光修调的优化方法。实验结果表明,150℃储存48h,可完全消除激光修调带来的影响,使CrSi薄膜电阻温度系数降到了20×10-6/℃,提高了CrSi薄膜电阻网络的稳定性,从而为研制高性能模拟集成电路打下坚实的基础。
The effect of the laser trimming on the stability of the CrSi thin-film resistor has been analyzed in this paper.The optimized method of the laser trimming for the CrSi thin-film resistor has been obtained.The experimental results showed that the effect of the laser trimming on the CrSi thin-film resistor could be eliminated completely under the condition of storing the thin-film at 150 ℃ for 48 h.The temperature coefficient of the CrSi thin-film resistor was reduced to 20×10-6/℃,and the stability of the CrSi thin-film resistor network has been improved.The study has laid a solid foundation for developing the high performance analog integrated circuit.
出处
《压电与声光》
CSCD
北大核心
2010年第5期821-822,829,共3页
Piezoelectrics & Acoustooptics
关键词
CrSi电阻
激光修调
温度系数
CrSi resistor
laser trimming
temperature coefficient
