多介质电容直接边界元计算及单介质计算加速

Calculating Capacitance with the Multiple Dielectrics Using the Direct BEM and Accelerating with Single Dielectric

在ＶＬＳＩ电路中，版图设计的层次化、微细化及气泡结构等，使互连寄生电容器更为复杂。重点介绍在直接边界元法计算中，应用稀疏矩阵存储技术有效组织离散化方程组系数矩阵，以期快速、精确地进行多介质嵌套寄生电容的计算。同时，利用直接边界元法的局部化性质，以多介质的组织方式加速单介质计算，算例表明，加速可达一个数量级。

In the VLSI circuits, the parasitic interconnect capacitors become more complex with the development of multilevel metals, highly integrated density and complicated structures such as air gap etc. In this paper, it is presented that the capacitance of structure with embedded multiple dielectrics can be calculated rapidly and accurately by using stroage techniques of the sparse matrix in the direct BEM for efficiently management of the coefficient matrix of the discrete equations. Meanwhile, it is indicated that a character of localization of the direct BEM can be used to accelerate calculation of capacitance with single dielectric, which is treated as the virtual multiple dielectrics. The experimental results show that the speed up can reach one magnitude.