摘要
介绍了在中国华晶中央研究所１．０微米工艺线上所开发的亚微米（０．８μｍ）工艺流程，重点介绍了０．８μｍ器件结构、工艺流程图、关键工艺设计以及用此流程制造出的０．８μｍ器件的各项ＰＣＭ参数。
Based on a 5 inch 1.0 micron CMOS R&D and production line of Huajing Central Reserch Institute, Sub micron (0.8μm) process flows was devloped. In this paper, discussed mainly on 0.8μm device structure, process flows, critical process developments and PCM parameters of 0.8um device.
出处
《系统工程与电子技术》
EI
CSCD
1999年第6期77-80,共4页
Systems Engineering and Electronics
关键词
晶体结构
工艺设计
亚微米技术
CMOS
LDD structure\ \ Self aligned double well\ \ Locos\ \ Etch back process
