摘要
抗折强度是反映低烧基板性能的一个非常重要的技术指标。通过试验找出了粉料粒度及配方、热压工艺条件、烧成曲线等与抗折强度的关系，并分析了其机理。试验得到的最佳工艺参数为：粉料粒度ｄ＝１．０～１．５μｍ；ＳｉＯ２／玻璃＝４５／５５；热压条件：Ｐ＝２０ＭＰａ，θ＝１１０℃，ｔ＝４０ｍｉｎ；烧成条件：θｐ＝８５０～９００℃，升温速度＝２．５℃／ｍｉｎ，ｔｋ＝３０ｍｉｎ。采用该工艺可将抗折强度提高到１５３Ｎ／ｍｍ２。
Bending resistance is one
of the important properties of LTCC substrates. The relations between bending resistance and
compositions and particle size of the powder, thermal press conditions and sintering conditions
are found out through a group of tests, and the mechanism is analyzed. The obtained optimized
process data are: particle size 1 0～1 5 μm; SiO 2/glass = 54/55; thermal press conditions:
pressure 20 MPa, temperature 110℃, time 40 min; sintering conditions:max temperature 850～
900℃, temperature rising rate 2 5℃/min, keeping time 30 min. Whit this process, bending
resistance reaches 153 N/mm 2.(1 ref.)
出处
《电子元件与材料》
CAS
CSCD
1999年第3期16-18,共3页
Electronic Components And Materials
关键词
抗折强度
陶瓷
热压工艺
LTCC基板
bending resistance, LTCC substrates,
thermal press, sintering profile
