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Effect of Low-frequency Power on F, CF_2 Relative Density and F/CF_2 Ratio in Fluorocarbon Dual-Frequency Plasmas 被引量:1

Effect of Low-frequency Power on F, CF_2 Relative Density and F/CF_2 Ratio in Fluorocarbon Dual-Frequency Plasmas
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摘要 Effect of low-frequency power on F, CF2 relative density and F/CF2 ratio, in C2F6, C4F8 and CHF3 dual-frequency capacitively couple discharge driven by the power of 13.56 MHz/2 MHz, was investigated by using optical emission spectroscopy. High F, CF2 relative density and high F/CF2 ratio were obtained in a CHF3 plasma. But for C2F6 and C4Fs plasmas, the F, CF2 relative density and F/CF2 ratio all decreased significantly due to the difference in both reactive paths and reactive energy. The increase of LF power caused simultaneous increase of F and CF2 radical relative densities in C4Fs and CHF3 plasmas, but led to increase of F with the decrease in CF2 relative densities in C2F6 plasma due to the increase of lower energy electrons and the decrease of higher energy electrons in electron energy distribution function (EEDF). Effect of low-frequency power on F, CF2 relative density and F/CF2 ratio, in C2F6, C4F8 and CHF3 dual-frequency capacitively couple discharge driven by the power of 13.56 MHz/2 MHz, was investigated by using optical emission spectroscopy. High F, CF2 relative density and high F/CF2 ratio were obtained in a CHF3 plasma. But for C2F6 and C4Fs plasmas, the F, CF2 relative density and F/CF2 ratio all decreased significantly due to the difference in both reactive paths and reactive energy. The increase of LF power caused simultaneous increase of F and CF2 radical relative densities in C4Fs and CHF3 plasmas, but led to increase of F with the decrease in CF2 relative densities in C2F6 plasma due to the increase of lower energy electrons and the decrease of higher energy electrons in electron energy distribution function (EEDF).
出处 《Plasma Science and Technology》 SCIE EI CAS CSCD 2010年第5期566-570,共5页 等离子体科学和技术(英文版)
基金 supported by National Natural Science Foundation of China (Nos.10975105, 10575074, 10635010)
关键词 fluorocarbon plasma dual-frequency discharge low-k films etching fluorocarbon plasma, dual-frequency discharge, low-k films etching
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