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新型隐埋Si/SiO_2做底镜的共振腔型探测器的理论分析 被引量:1

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摘要 本文提出一种新型隐埋Si/SiO2Bragg反射器结构的Si基共振腔型光电探测器,该结构具有与集成电路相兼容的特点.理论计算表明量子效率较普通光电探测器提高了3~4倍.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1999年第7期601-605,共5页 半导体学报(英文版)
基金 "863"计划 国家自然科学重点基金
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参考文献3

  • 1朱育清.Si基量子阱材料1.3μm波长光电探测器的研究.中国科学院半导体研究所博士论文[M].,1997..
  • 2Zhu Yuqing,47th ECTC,1997年
  • 3朱育清,博士学位论文,1997年

同被引文献14

  • 1Liang K,Chen H D,Deng H,et al.Optimization for top DBR's reflectivity in RCE detector.Chinese Journal of Semiconductors,2004,25(2):409
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  • 4Tong S,Liu J L,Wan J,et al.Normal-incidence Ge quantum-dot photodetectors at 1.5mm based on Si substrate.Appl Phys Lett,2002,80:1189
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  • 6Winnerl S,Buca D,Lenk S,et al.Fast IR Si /SiGe superlattice MSM photodetectors with buried CoSi2 contacts.Microelectron Eng,2002,64:205
  • 7Li Cheng,Yang Qinqing,Wang Hongjie,et al.Si1-xGe x /Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3μm.Appl Phys Lett,2000,77:157
  • 8Brunner K.Si/Ge nanostructures.Rep Prog Phys,2002,65:27
  • 9Li Baojun,Jiang Zuimin,Pei Chengwen,et al.Integration of wavelength signal divider and infrared photodetectorsbased on the plasma dispersion effect in SiGe/Si.Appl Phys Lett,1999,74:1663
  • 10Elkurdi M,Boucaud P,Sauvage S,et al.Near-infrared waveguide photodetector with Ge/Si self-assembled quantum dots.Appl Phys Lett,2002,80:509

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