亚微米CMOS结构光学交叉互连电路芯片的设计

A Submicron CMOS Optical Interconnection Integrated Circuit

同单路光接收／发送电路系统相比，采用单片集成的多路交叉互连接收／发送系统可实现大容量信息交换和高度复杂的信息处理。给出了与１０×１０阵列多量子阱（ＭＱＷ）器件芯片倒扣连接的接收／发送交叉互连电路的设计，芯片电路采用０．３５／０．５μｍ设计规则、三层金属布线ＣＭＯＳ结构，在２ｍｍ×２ｍｍ芯片上，可完成１６路接收／发送及１６×１６信号交叉互连的功能。

Compared with the single beam optical receiving/ transmitting circuit, the monolithic multi beam optical interconnection circuit promises to provide large numbers of high bandwidth interconnections for high complexity processing chips. An optical interconnection chip is designed, on which a flip chip with a 10×10 array of multiple quantum well(MQW)detectors and modulators is bonded. A triple metal CMOS structure with a lambda of 0.35/ 0.5 μm is used for the design of the circuit. On a chip area of 2 mm × 2 mm , a 16 channel of receivers/transmitters and a 16×16 interconnection circuit are realized.