高频大功率金刚石薄膜场效应管的研究进展

Progress of High Frequency and High Output Power FET

随着CVD人工合成金刚石薄膜质量的不断提高,其优异的电学性能在高频、大功率领域特别是场效应管中的应用受到了极大地关注.制作金刚石薄膜场效应管,电子级质量的薄膜、形成良好的接触以及半导体的形成是其关键技术.以此为基础,为达到其在高频大功率下使用的目的,减小栅长和各种寄生参数以及提高耐压和散热能力成为决定其性能优劣的关键因素.本文针对金刚石薄膜场效应管制作的关键技术的突破、H端基表面导电机制、目前高频大功率场效应管的水平以及出现的一些相关在研热点进行了综述,展望了其巨大的优越性和广阔的应用前景.

Diamond films have been paid much attention in high frequency and high output power field,especially in field effect transistors（FET）with its outstanding electrical properties in the last two decades.For optimum electronics performance,quality of electronic films,good contacts and forming semiconductors are key techniques to make FETs.How to reduce gate length and various parasitic parameters and improve withstand voltage and heat-sinking capability determines whether FETs are of high-performance.The breakouts of key techniques,research progress and related hot spots of diamond films for high frequency and high output power FETs are reviewed.Mechanisms proposed to explain electrical conductivity of H-terminated diamonds are also presented.