摘要
以（Ｓｒ，Ｐｂ）ＴｉＯ３为主要原料，以Ｙ２Ｏ３为掺杂剂制备样品，论述了（Ｓｒ，Ｐｂ）ＴｉＯ３系Ｖ型ＰＴＣ材料的制备工艺要点，确定了掺杂剂的最佳掺量，并对其半导机理进行了分析。
Samples are prepared with (Sr,Pb)TiO3 powder as main raw material.Donor dopant used
Y2O3.The preparation gists of (Sr,Pb)TiO3 material with V-type positive temperature coefficient are
outlined.The suitable amount of dopant is determined.The semiconductor mechanism of it is
explained.
出处
《电子工艺技术》
1999年第4期142-144,共3页
Electronics Process Technology
关键词
钛酸锶铅材料
掺杂
铁电半导体
半导体陶瓷材料
Strontium-lead titanate material
Dopant
V-type PTC resistivity-temperature
characteristics
Electrical conductor mechanism
