Si衬底GaN基蓝光LED钝化增透膜研究

Research of Passivation and Anti Reflecting Layer on GaN Based Blue LED on Silicon Substrate

在Si衬底GaN基蓝光LED芯片上生长了一层SiON钝化膜,使器件的光输出功率提高12%且有效降低了器件在老化过程中的光衰。对有、无钝化膜的样品进行性能比较,结果表明SiON钝化膜能有效隔离环氧树脂与高温芯片,缓解环氧树脂的老化变黄;又能部分弛豫环氧树脂对芯片的张应力,降低非辐射复合中心产生的几率;有效减小器件的侧壁漏电通道,降低器件的光衰和漏电流,提高器件的可靠性。

SiON passivation layer is deposited on GaN blue LED based on Si substrate.It improves the light output power of LED by 12% and reduces the luminous decay of LED during aging efficiently.The analysis results of the samples with and without SiON passivation layer demonstrate that SiON layer can separate the epoxy from hot surface of LED during aging,which prevents epoxy resin from carbonization.In addition,the SiON layer can partly relax tensile stress of device from epoxy resin,and reduce the generation probability of non-radiation centers.Furthermore,SiON layer can reduce sidewall leakage current of LED.In a word,SiON layer can improve the stability of LED.