摘要
基于时域有限差分法(FDTD)对非线性模式面结构砷化镓光导开关的热传导过程进行了数值模拟。研究了光导开关临界频率与电流丝位置、半径、数量、芯片尺寸、环境温度等参数的关系。研究表明:临界频率随电流丝半径、数量的增加,呈指数上升趋势;临界频率随着电流丝深度、芯片厚度的增加,呈指数下降趋势;临界频率在一定范围内随环境温度的增加呈线性下降趋势。
The heat dissipation process of GaAs photoconductive semiconductor switch(PCSS) in nonlinear mode has been simulated based on finite difference time domain method(FDTD).Factors affecting the critical frequency,such as location,radius,number of current filament,dimensions of PCSS chip and environment temperature were discussed.The results are as follows: the critical frequency exponentially increases as radius and the number of current filament increases,it decreases exponentially as distance between location of current filament and surface of chip increases and thickness of chip increases.The critical frequency decreases linearly as environment temperature rises in a special range.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2010年第11期2778-2782,共5页
High Power Laser and Particle Beams
基金
国家自然科学基金项目(50837004)
中国工程物理研究院科学技术发展基金项目(2008B0402037
2009B0402040)
关键词
光导开关
砷化镓
非线性模式
电流丝
临界频率
热传导
photoconductive semiconductor switch
GaAs
nonlinear mode
current filament
critical frequency
heat conduction