摘要
We fabricate 1.5 μm InGaAsP/InP tunnel injection multiple？quantum-well （TI-MQW） Fabry-Perot （F-P） ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition （MOCVD）. Characteristic temperature T0 of 160 K at 20°C is obtained for 500？μm？long lasers. T0 is measured as high as 88 K in the temperature range of 15？75°C. Cavity length dependence of T0 is investigated.
We fabricate 1.5 μm InGaAsP/InP tunnel injection multiple？quantum-well （TI-MQW） Fabry-Perot （F-P） ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition （MOCVD）. Characteristic temperature T0 of 160 K at 20°C is obtained for 500？μm？long lasers. T0 is measured as high as 88 K in the temperature range of 15？75°C. Cavity length dependence of T0 is investigated.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 60736036, 60706009, 60777021 and 60702006, the National Basic Research Program of China under Grant Nos 2006CB604901 and 2006CB604902, and the National High-Tech Research and Development Program of China under Grant No 2007AA03Z419, 2007AA03Z417 and 2009AA03Z442.
