摘要
简要介绍宽禁带半导体氮化镓材料的生长、微波电子器件的物理特性、制造工艺和微波性能。
The wideband gap semiconductor GaN materials
growth,microwave devices physics,manufacturing technology and microwave performance has
been briefly described in this paper.
出处
《半导体情报》
1999年第3期1-9,共9页
Semiconductor Information
