摘要
研制出一种实用化的ＧａＡｓ激光器高速驱动电路，该电路采用源耦合场效应管逻辑电路形式，０．８μｍ栅工艺，全离子注入平面工艺，单电源（－５．２Ｖ）供电。并给出了研究结果：最大驱动电流可达４５ｍＡ，数据传输速率２．５Ｇｂ／ｓ。
A 25Gb/s GaAs laser diode driver IC is presented,which is implemented with source coupled field effect logic circuit configuration and 08m full ion implantation plane technology and by single52V power supply.This paper also reports the experimental results:the largest driver current 45mA at bit rates up to 25Gb/s.
出处
《半导体情报》
1999年第3期56-57,共2页
Semiconductor Information
