共振隧穿二极管研究进展

Research Progress of Resonant Tunneling Diodes

简要评述共振隧穿二极管（ＲＴＤ）器件研究进展。重点探讨以下问题：为什么ＲＴＤ研究经久不衰？器件理论模型达到何等水平？器件特性、结构和材料方面有哪些关键？围绕这些问题，介绍了有关基本概念，对ＲＴＤ器件物理模型和特性近来的研究成果和前景进行了分析，并提要性地和同类的其它量子器件作了比较。

This paper provides a succinct review of progress and perspective of research on resonant tunneling diodes (RTDs). The main issues discussed include why RTD research has been kept active for years, to what extent RTDs can be modeled, and what the important issues are in terms of device characteristics, material and structural considerations. Centered at these questions, the basic concepts pertinent to quantum transport modeling and RTD properties are introduced, and a brief comparison with other similar quantum devices is presented.