高功率无铝半导体激光器

HIGH POWER ALUMINIUM FREE LASERS

介绍了单量子阱 (SQW )分别限制异质结构 (SCH)的InGaAsP/GaAs半导体激光器所得到的最新成果。利用一种改进的液相外延 (LPE)技术 ,在( 1 0 0 )GaAs衬底上制成的InGaAsP/GaAsSQWSCH激光器。主要参数如下 :发射波长λ =80 8± 4nm ,阈值电流密度J =30 0A/cm2 ,对于条宽W =1 0 0 μm的激光器 ,连续输出功率最大达到

This paper presents some new results obtained recently in the study of single quantum well( SQW), seperate confinement structure (SCH) InGaAsP/GaAs lasers. Using a modified liquid phase epitaxy method(LPE), InGaAsP/GaAs SCH SQW lasers were fabricated on (100) GaAs substrates and the following main parameters were obtained: lasing wavelength λ =808±4nm, threshold current density J th =300A/cm 2, attaining a CW power of 4W for the laser having a stripe width of W=100μm.