摘要
母线排的杂散电感和开关过程中较大的di/dt会在IGBT上引起很高的尖峰电压,从而增加了逆变器的开关损耗,降低了可靠性。提出针对三相IGBT逆变器中尖峰电压的分析方法。首先利用有限元法对三相IGBT逆变器中两种不同类型母线排建模,分析提取母线排的杂散参数,接着在PSpice中建立逆变器各部分等效电路模型,利用该模型对IGBT逆变器中的尖峰电压进行仿真分析。实验研究表明,在不同负载电流下,仿真和实测尖峰电压在峰值和波形上都具有良好的符合度,表明该方法能够较准确地分析和预测逆变器中的尖峰电压。
Parasitic inductance of the busbar and large di/dt during switching process cause serious surge voltage in inverters,which increase extra loss and reduce the reliability of the inverter.Two different types of the busbar in three-phase IGBT inverters are modeled with the JMAG software,which is based on the finite element analysis（FEA）method.Then the parasitic parameters of the busbar are extracted and integrated into the inverter model which built with PSpice software to analyze the surge voltage on IGBTs under different load currents.The simulation results agree with the ex-perimental results well,which prove that this analysis method can analyze the surge voltage in inverters effectively.
出处
《电力电子技术》
CSCD
北大核心
2010年第10期91-93,115,共4页
Power Electronics
基金
日本三菱重工基金资助项目(08-41)~~
关键词
逆变器
尖峰电压
母线排
杂散电感
inverter
surge voltage
busbar
parasitic inductance
