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Cu-2.0Ni-0.5Si合金时效析出动力学研究 被引量:8

Study on aging kinetics of Cu-2.0Ni-0.5Si alloy
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摘要 研究了不同时效温度和时间对Cu-2.0Ni-0.5Si合金组织和性能的影响,合金经不同温度和时间时效处理后,第二相呈弥散分布,并可获得较高的显微硬度及导电率。通过该合金在500℃时效过程中的导电率变化,同时根据导电率与新相的转变量之间的关系计算出了时效过程中新相的转变比率,从而确定了该合金不同温度下时效时的Avrami相变动力学方程及导电率方程。该合金时效析出过程中以Orowan机制为主,实际强化的结果与采用Orowan强化机制计算的结果非常接近。 The effect of aging temperature and aging time on microstructure and properties of Cu-2.0Ni-0.5Si alloy were studied.The secondary phase was dispersive distribution in the alloy,the high hardness and electrical conductivity were obtained after the alloy was aged at different aging temperature and aging time.The transformation ratio of new phase in Cu-2.0Ni-0.5Si alloy was calculated when aging at 500℃by measuring electrical conductivity,the relationship between the electrical conductivity and the quantity of new phase.Both the equation of Avrami phase transformation kinetics and the electrical conductivity equation were obtained at different aging temperature.The Orowan strengthening mechanism was operated in the aging progress.The calculated results by Orowan strengthening mechanism were closed to the actual results.
出处 《功能材料》 EI CAS CSCD 北大核心 2010年第10期1827-1830,共4页 Journal of Functional Materials
基金 国家高技术研究发展计划(863计划)资助项目(2006AA03Z528) 国家自然科学基金资助项目(50571035) 河南省杰出青年基金资助项目(0521001200) 河南科技大学博士启动基金资助项目(09001414)
关键词 Cu-2.0Ni-0.5Si合金 时效 相变动力学方程 Orowan强化机制 Cu-2.0Ni-0.5Si alloy aging phase transformation kinetics equation Orowan strengthening mechanism
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  • 1赵冬梅,董企铭,刘平,康布熙,王东锋,金志浩.Cu-Ni-Si合金在时效过程中析出与再结晶行为[J].功能材料,2002,33(6):618-620. 被引量:30
  • 2Suzuki S,Shibutani N,Mimura K,et al. [J]. Journal of Alloys and Compounds,2006,417 : 116-120.
  • 3Liu P,Kang B X,Cao X G,et al. [J]. Materials Science and Engineering A, 1999,265 : 262-267.
  • 4Su Juan-hua, Dong Qi-ming, Liu Ping, et al. [J ]. Materials Science and Engineering A, 2005,392 (1-2) : 422-426.
  • 5Zhao D M,Dong Q M,Liu P,et al. [J]. Materials Chemistry and Physics, 2003,79 : 81-86.
  • 6Rdzawski Z,Stobrawa I. [J]. Materials Science and Technology, 1993,2 : 142-148.
  • 7Kim Y G, Ryu C. [J]. Semiconductor international, 1985,8 (4) :250-253.
  • 8Lockyer S A, Noble F W. [J]. Mater Sci, 1994,29: 218- 226.
  • 9Correia J B,Davies H A,Sellars C M. [J].Acta Mater, 1997,45(1) :177-190.

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