摘要
运用变角Ｘ射线光电子谱和原子力显微镜技术对沉积于Ｓｉ３Ｎ４衬底表面上的纳米级Ａｕ薄膜的电迁移特性进行了实验研究。结果表明：在电场作用下，薄膜表面的微观结构发生了变化，Ａｕ的晶粒趋向细化，膜层趋于均匀，表面粗糙度降低；电迁移过程中 Ａｕ与衬底 Ｓｉ３Ｎ４发生了界面化学反应，生成了 Ａｕ的硅化物ＡｕＳｉｘ。
The electromigration behavior of the ultra thin An films grown on Si3N4 substrate was studied with angle dependent X-ray photoelectron spectroscopy and atomic force microscopy. Two conclusions can be drawn. One observation is that the electric field is responsible for the variations in its microstructures, including finer Au grain sizes, more uniform film layers and low surface roughness. The other is that Au films strongly interact with the Si3N4 substrate at the interfaces in the electromigration, forming gold silicide, AnSix.
出处
《真空科学与技术》
CSCD
北大核心
1999年第4期237-241,共5页
Vacuum Science and Technology
基金
国家自然科学基金!59472024
