等离子体基低能离子注入技术的研究与发展

Research and Development of Plasma-based Low-energy Ion Implantation

将低能离子注入技术引入等离子体基离子注入，一方面利用低能离子注入的低能优势，另一方面利用等离子体基离子注入的全方位优势，开发出等离子体基低能离子注入技术。等离子体基低能离子注入技术包括等离子体基低能氮、碳离子注入和等离子体源低能离子增强沉积两类工艺。低能离子的注入能量（０．４～３ ｋｅＶ）达到常规等离子体热化学扩散处理的电压范围，而工艺温度（２００～５００℃）则降至常规离子注入的上限温度范围。通过大量的工艺实验研究，实现了工艺过程的优化和控制，完成了对等离子体基低能离子注入改性铁基材料的金属学问题及物理、化学和力学性能的系统研究。证明了等离子体基低能离子注入技术满足铁基材料的表面改性要求。同时具有产业化发展潜力。

A novel technique called plasma-based low-energy ion implantation (PBLEII) was developed by combining the technical advantages of the two well-developed techniques, the conventional plasma-based ion implantation (PBII) and the low energy ion beam implantation (IBI). The strengths of the new technique are the low ion-energy and the elimination of line-of-sight restrictions. PBLEII technique includes two kinds of processes; one is the plasma source ion nitriding /carburizing (PS I N /PS I C ); the other is the plasma source low energy ion en hanced deposition (PSLEIED) of thin films. The energies required for ion implantation are in the range of 0. 4 to 3 keV, which is close to the energy range in the conventional plasma thermcr-difussion. The processing temperatures can be lowered to 200~500°Ｃ, which are the upper and the lower temperature limits of the conventional ion beam implantation and the plasma thermo-diffusion respectively. In addition, optimization and control of the PBLEII process parameters have been realized experimentally. In the case of the edified ferrous materials,many projects involving the physical, chemical and mechanical properties as well as metallograhical theories have been extensively studied. The results of these studies show that PBLEII works well in metallic surface modification and that it has wide potential applications in industries.