W/SiC纳米多层膜的制备及表征

Growth and Characterization of W/SiC Nanometer Multilayers

采用多靶磁控溅射制备了 Ｗ／ＳｉＣ纳米多层膜。并用 ＸＲＤ和 ＴＥＭ研究了 Ｗ／ＳｉＣ纳米多层膜的微结构。研究表明，Ｗ／ＳｉＣ纳米多层膜的调制结构界面平直、清晰、周期性好；ＳｉＣ调制层为非晶态，Ｗ调制层在大调制周期为纳米晶，并随调制周期减小逐渐转变为非晶态。

W/SiC nanometer multilayers were grown byimulti-tagnetron。 sputtering. The microstruc- tures and of the films were studied with X-ray diffraction electron microscopy.The results show that the film have well-defined interface and good periodicity. The SiC layers were found to be amorphous,whereas,the W layers consist of nanometer-sized crystal grains.Howevers,as the modulation length de- creases,only amorphous W can be observed in the W modulation layers.