掺稀土Dy的双势垒薄膜结构隧道发光结的研究

Study on the Dy-doped Double-barrier Thin Film Light Emission Tunneling Junction

将少量稀土元素 Ｄｙ掺入隧道结制备成 Ｃｕ－Ｄｙ－Ａ１２Ｏ３－ＭｇＦ２－Ａｕ结构双势垒发光结。结果表明，稀土元素 Ｄｙ的引入，改善了结的粗糙度，使结由界面等离极化激元（ｓｕｒｆａｃｅ ｐｌａｓｍｏｎ ｐｏｌａｒｉｔｏｎ，ＳＰＰ）耦合发光的阈值电压有所降低，结的发光强度得到提高，改善了结的发光性能，与不掺Ｄｙ的结相比，其发光光谱在４６０．８ ｎｍ处发生了分裂，这与Ｄｙ掺入后栅区形成的附加能级有关。

A new type of double barrier light emission thin film tunneling junction (Cu- Dy- Al2 O3S- MgF2 - Au ) was fabricated through doping of trace rare-earth element Dy. The coupling of plasmons and polaritons at the interfaces of the junction is mainly responsible for light emission of the properly biased junction. Our results show that the Dy may significantly improve the performance of the tunnel junction. The advantages of the new junction include the improvement of the interfacial roughness, an increase of the light emission intensity and a lowering of the threshold bias voltage. Dy doping also induces extra energy levels in the barrier region , and these new levels result in a Splitting of the light emission spectrum at 460 .8 um.