中子位移损伤监测技术研究

Monitor Technology About Neutron Displacement Damage

利用硅双极晶体管直流增益倒数与中子注量具有线性关系的特点,将其作为位移损伤监测器以获取不同中子辐射场的损伤特性。采用两种不同的数据分析方法,分别得到了两种位移损伤监测器阵列的相对损伤常数。研究结果为在现有的实验条件和测试手段基础上选择位移损伤监测器和分析监测结果奠定了基础。

The silicon bipolar transistors have been used as displacement damage monitors to obtain the characteristics of different neutron fields, by the liner relationship between the reciprocal gain and neutron fluence. Two different data analysis methods were adopted to compute the relative damage constants of two silicon displacement damage monitor arrays respectively. The results lay a foundation for choosing the displacement damage monitors and analyzing the monitoring data on present experimentation and test technique.