瞬时电离辐射剂量率对BiMOS运放输出扰动时间的影响

Transient Radiation Induced Disturbance Duration Behavior of BiMOS Op-amp Output Due to Dose Rate

对两种不同类型BiMOS运算放大器(JFET-Bi,PMOS-Bi)γ瞬时电离辐射效应进行研究。结果显示,BiMOS运放瞬时辐射扰动时间随剂量率变化呈现出一定的规律性,在剂量率较低情况下扰动时间随剂量率指数增长,剂量率较高时,扰动时间呈现出饱和特性。另外,输入信号不同,输出扰动时间随剂量率的变化也会有差异。

This work was devoted to investigate the gamma transient ionizing radiation effect of two kinds of BiMOS op-amp （JFET-Bi, PMOS-Bi）. The experimental results indicate the changing of the disturbance duration of the BiMOS op-amp output with dose rate shows some regularity. The time of the transient radiation disturbance increases exponentially with dose rate while the dose rate is low, and the disturbance duration presents saturated characteristics while in high dose rate. What’s more, the disturbance duration of the output also behaves some differences for different input signals.