摘要
针对应用于单光子探测的单光子雪崩二极管建立了EDA电路模型,讨论了模型参数设置及仿真方法,利用此模型分别完成了像素级被动淬火集成电路、像素级主动淬火及快速恢复集成电路的设计仿真,并利用CSMC公司的0.5μmCMOS工艺进行流片制作。结果表明,建立的探测器模型与CMOS电路设计相互兼容,通过合适的电路设计和参数设置,采用以上集成淬灭电路的单光子探测器的最小"盲时"可分别达到100ns和4ns。
An EDA model used for simulating single-photon avalanche diodes is presented.Parameters of the model and simulation methods are discussed.The design and simulations of a pixel-passive quenching circuit and a pixel-active quenching and recharging circuit are obtained based on this EDA model.These two circuits are fabricated with CSMC＇s 0.5μm CMOS process.Tests results indicated that both of the two quenching circuits are very compact and their＂deadtime＂ can achieve 100ns and 4ns resepectively.
出处
《半导体光电》
CAS
CSCD
北大核心
2010年第5期694-697,701,共5页
Semiconductor Optoelectronics
