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CCD用透明栅电极的制作 被引量:1

Fabrication of Transparent Gate Electrodes for CCD
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摘要 采用反应溅射法制备了ITO透明导电薄膜材料,薄膜电阻率为2.59×10-4Ω·cm,可见光透过率可达90%;通过优化光刻工艺条件,选择合适的ITO薄膜刻蚀液,完成了ITO透明栅电极的制作;使用ITO透明电极代替其中一相多晶硅电极,制作的CCD图像传感器,其蓝光响应明显增加。 Transparent conductive indium-tin-oxide(ITO)films were deposited by reactive sputtering.The conductance and the maximal transmittance of the films are obtained to be 2.59×10^-4 Ω·cm and greater than 90% for the visible light spectrum,respectively.By optimizing the lithography process and using the appropriate ITO etching fluid,the ITO transparent gate electrodes were successfully fabricated,and CCD image sensors were fabricated by replacing one of the CCD's polysilicon electrodes with ITO.The blueresponse of the sensors is significantly improved.
出处 《半导体光电》 CAS CSCD 北大核心 2010年第5期732-735,共4页 Semiconductor Optoelectronics
基金 中国电子科技集团公司CCD研发中心基础技术基金项目
关键词 ITO薄膜 透明栅电极 CCD indium-tin-oxide(ITO)films transparent gate electrodes CCD
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参考文献5

  • 1Meisenzahl E, Chang W, DesJardin W, et al. A 3. 2 million pixel full-frame true 2-phase CCD image sensor incorporating transparent gate technology[J]. Proc. SPIE,2000, 3965: 92-100.
  • 2Karasawa T, Miyata properties of indium tin unheated substrates by Thin Solid Films, 1993, Y. Electrical and optical oxide thin films deposited on DC reactive sputtering [J ]. 223.. 135.
  • 3Wu W F, RF magnetron sputtering ITO films and ITO films with antireflective and hard coating [D]. Hsinchu: National Chiao Tung University, 1994.
  • 4KimJ H, Kang C J, Kim Y S. Development of a micro{abricated disposable microchip with a capillary electrophoresis and integrated three-electrode electrochemical detection [ J ]. Biosensors and Bioelectronics, 2005, 20(11): 2314-2317.
  • 5谢秀春.氧化铟锌透明导电薄膜之热稳定性[D].中国台北:国立清华大学,2002.

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